| Poniedziałek, 09 Kwi 18r, godz. 08:10
I can read in the user's guide the following statement regarding the modeling of TF modules (July 2002 update)."The main novelty is the special tools for the treatment ofThin film technology modules (a-SI:H, with tandem or tripple junctions, CIS, CdTe). Up to now the program used the standard one-diode model, although it is not well-suited for these technologies. There is no consensus up to now in the PV community on how to model these devices."After more than 10 years, what is the actual status for such a modeling? Is it still difficult to model thin film with respect to crystalline?
I didn't find the right solution from the internet.
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